PD54003-E中文资料RF功率LDMOS晶体管数据手册ST规格书

描述 Description

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearity and reliability of ST’s latest LDMOS technology, the PowerSO-10RF. The superior linearity performance makes it an ideal solution for portable radios. The PowerSO-10RF is the first true surface-mount device (SMD) plastic RF power package. It is based on the highly reliable PowerSO-10, the first ST-originated, JEDEC-approved, high-power SMD package. It has been optimized specifically for RF requirements, and offers excellent RF performance as well as ease of assembly.

特性 Features

• Excellent thermal stability
• Common source configuration
• POUT = 3 W with 12 dB gain @ 500 MHz
• New RF plastic package

简介

PD54003-E属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PD54003-E晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。