RF POWER transistor, LDMOST plastic family N-channel enhancement-mode, lateral MOSFETs

Description The PD54003 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. The PD54003 features the excelle

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STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

文件：1.53332 Mbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

RF功率LDMOS晶体管

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device features the excellent gain, linearit • Excellent thermal stability \n• Common source configuration \n• POUT = 3 W with 12 dB gain @ 500 MHz \n• New RF plastic package;

ST

意法半导体

Package：PowerSO-10 裸露底部焊盘；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 25V 500MHZ PWRSO10

STMICROELECTRONICS

意法半导体