IRFIP054

iscN-ChannelMOSFETTransistor

IRFM054

SimpleDriveRequirements

IRFM054

N-CHANNELPOWERMOSFET

IRFM054

POWERMOSFETTHRU-HOLE(TO-254AA)

HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRFN054

POWERMOSFETN-CHANNEL(BVdss=60V,Rds(on)=0.020ohm,Id=55A*)

RDS(on)0.020Ω ID55A* HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab

IRFN054

SimpleDriveRequirements

IRFN054SMD

N-CHANNELPOWERMOSFET

VDSS60V ID(cont)45A RDS(on)0.027Ω FEATURES •HERMETICALLYSEALEDSURFACEMOUNTPACKAGE •SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT •HIGHPACKINGDENSITIES

IRFP054

PowerMOSFET(Vdss=60V,Rds(on)=0.014ohm,Id=70*A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRFP054

PowerMOSFET

IRFP054

PowerMOSFET

IRFP054

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

IRFP054

PowerMOSFET

IRFP054

N-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=70A@TC=25℃ •DrainSourceVoltage-:VDSS=60V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.014Ω(Max) •FastSwitching

IRFP054

PowerMOSFET

IRFP054

PowerMOSFET

FEATURES •DynamicdV/dtrating •Isolatedcentralmountinghole •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesi

IRFP054N

N-ChannelMOSFETTransistor

•DESCRITION •UltraLowOn-resistance •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤12mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

IRFP054N

AdvancedProcessTechnology

Description TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelsprecludetheuseofTO-220devices.TheTO-247issimilarbutsuperiortotheearlierTO-218packagebecauseofitsisolatedmountinghole. ●AdvancedProcessTechnology ●Dynamicdv/dt

IRFP054N

PowerMOSFET(Vdss=55V,Rds(on)=0.012ohm,Id=81A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFP054NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFP054NPBF

ADVANCEDPROCESSTECHNOLOGY