首页 >PC400DIPSHARP>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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-36to-75Vdc;400W/10A | LINEAGEPOWER Lineage Power Corporation | LINEAGEPOWER | ||
-36to-75Vdc;400W/10A | LINEAGEPOWER Lineage Power Corporation | LINEAGEPOWER | ||
-36to-75Vdc;400W/10A | LINEAGEPOWER Lineage Power Corporation | LINEAGEPOWER | ||
ProgrammableResistance-Capacitance-Inductance-RTDDecadeSubstituter Features: AllSubstuters •Manualcontrolviathumbwheelswitches standard •OponalRS-232,EthernetorIEEE-488 Interfaces •1to10Decades •Benchtoporrackmountversions •Singleordual(twosubstutersinone chassis)versions •Builttoordersocompletelyconfigurable at | IET IET Labs Inc. | IET | ||
ProgrammableResistance-Capacitance-Inductance-RTDDecadeSubstituter Features: AllSubstuters •Manualcontrolviathumbwheelswitches standard •OponalRS-232,EthernetorIEEE-488 Interfaces •1to10Decades •Benchtoporrackmountversions •Singleordual(twosubstutersinone chassis)versions •Builttoordersocompletelyconfigurable at | IET IET Labs Inc. | IET | ||
Low-voltageavalancheregulatordiodes DESCRIPTION HighperformancevoltageregulatordiodesinhermeticallysealedleadedglassSOD27(DO-35)packages. TheseriesconsistsofPLVA450AtoPLVA468A. FEATURES •Verylowdynamicimpedanceatlowcurrents:approximately1⁄20ofconventionalseries •Hardbreakdownknee •Lownoise:a | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelmTrenchMOSultralowlevelFET | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-channelmTrenchMOS™ultralowlevelFET 1.1Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. 1.2Features 1.3Applications nSurfacemountedpackagenFootprint40smallerthanSOT23 nLowon-stateresistancenLowthresholdvoltage. nDrivercircuitsnSwitchingin | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
DualN-channelmTrenchMOS??ultralowlevelFET | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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