Dual N-channel mTrenchMOS™ ultra low level FET

1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Dual device n Fast switching n Low on-state resistance n Low threshold voltag

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NEXPERIA

安世

Dual N-channel mTrenchMOS??ultra low level FET

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PHI

PHI

Dual N-channel TrenchMOS ultra low level FET

Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

Dual N-channel mTrenchMOS™ ultra low level FET

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