20 V, 4 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4420D Features ■ Very low collector-emitter saturation resistance ■ Ultra low collector-emitter saturation voltage ■ 4

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恩XP

丝印：D5；Package：SC-74；20 V, 4 A PNP low VCEsat (BISS) transistor

Features * Very low collector-emitter saturation resistance * Ultra low collector-emitter saturation voltage * 4 A continuous collector current * Up to 15 A peak current * High efficiency leading to less heat generation

文件：246.34 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 4 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4420D. Features ■ Very low collector-emitter saturation resistance ■ Ultra low collector-emitter saturation voltage ■ 4 A continuous collector curren

文件：124.92 Kbytes 页数：16 Pages

PHI

飞利浦

20 V, 4 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS4420D. Features ■ Very low collector-emitter saturation resistance ■ Ultra low collector-emitter saturation voltage ■ 4 A continuous collector curren

文件：124.92 Kbytes 页数：16 Pages

PHI

飞利浦

丝印：D5；Package：SOT457；20 V, 4 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4420D-Q 2. Features and benefits • Very low collector-emitter saturation resistance • Ultra low collector-emitter saturation voltage • 4 A continuou

文件：292.23 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20 V, 4 A PNP low VCEsat (BISS) transistor

文件：131.6 Kbytes 页数：14 Pages

PHI

飞利浦

20 V, 4 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4420D. • Very low collector-emitter saturation resistance\n• Ultra low collector-emitter saturation voltage\n• 4 A continuous collector current\n• Up to 15 A peak current\n• High efficiency leading to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

20 V, 4 A PNP low VCEsat transistor

Nexperia

安世

Package：SC-74，SOT-457；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 4A 6TSOP

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司