PBSS5420D

20 V, 4 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)transistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4420D Features ■Verylowcollector-emittersaturationresistance ■Ultralowcollector-emittersaturationvoltage ■4

PBSS5420D

20 V, 4 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT457(SC-74)SMDplasticpackage. NPNcomplement:PBSS4420D. Features ■Verylowcollector-emittersaturationresistance ■Ultralowcollector-emittersaturationvoltage ■4Acontinuouscollectorcurren

PBSS5420D

Marking：D5；Package：SC-74；20 V, 4 A PNP low VCEsat (BISS) transistor

Features *Verylowcollector-emittersaturationresistance *Ultralowcollector-emittersaturationvoltage *4Acontinuouscollectorcurrent *Upto15Apeakcurrent *Highefficiencyleadingtolessheatgeneration

PBSS5420D-1

20 V, 4 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT457(SC-74)SMDplasticpackage. NPNcomplement:PBSS4420D. Features ■Verylowcollector-emittersaturationresistance ■Ultralowcollector-emittersaturationvoltage ■4Acontinuouscollectorcurren

PBSS5420D-Q

Marking：D5；Package：SOT457；20 V, 4 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4420D-Q 2.Featuresandbenefits •Verylowcollector-emittersaturationresistance •Ultralowcollector-emittersaturationvoltage •4Acontinuou

PBSS5420D_15

20 V, 4 A PNP low VCEsat (BISS) transistor

PBSS5420D,115

Package：SC-74，SOT-457；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 4A 6TSOP

Nexperia USA Inc.

PE5420E-I

PEseriesPCBsafetyisolationtransformer

PE5420-M

PEseriesPCBsafetyisolationtransformer

PJQ5420

30VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@16A