PBSS5350Z-Q中文资料安世数据手册PDF规格书

厂商型号	PBSS5350Z-Q
功能描述	50 V, 3 A PNP low VCEsat transistor
丝印标识	SC-73
封装外壳	PB5350
文件大小	251.33 Kbytes
页面数量	12 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-28 16:20:00
人工找货	PBSS5350Z-Q价格和库存，欢迎联系客服免费人工找货

1. General description

PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD)

plastic package.

NPN complement: PBSS4350Z-Q

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability: IC and ICM

• High collector current gain (hFE) at high IC

• High energy efficiency due to less heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• DC/DC converters

• Supply line switching

• Battery charger

• LED backlighting

• Linear voltage regulation (LDO)

• Driver in low supply voltage applications, e.g. lamps, LEDs

• Inductive load driver (for example relays, buzzers, motors)