60 V, 2 A PNP/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • High efficiency due to less heat generation • Qualified according to A

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安世安世半导体(中国)有限公司

60 V, 2 A PNP/PNP low VCEsat double transistor

PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PBSS4260PANP-Q\n NPN/NPN complement: PBSS4260PAN-Q

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60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor

文件：742.34 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 2 A NPN/PNP low VCEsat double transistor

Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • Reduced Printed-Circuit Board (PCB) requirements • Exposed heat sink for excellent thermal and electrical conductivity •

文件：286.77 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司