PBSS5240Z

Package：SC-73；40 V, 2 A PNP low VCEsat (BISS) transistor

Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4240Z Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabilit

PBSS5240Z

40 V, 2 A PNP low VCEsat (BISS) transistor; • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n;

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4240Z\n

PBSS5240Z-Q

40 V; 2 A PNP low VCEsat transistor;

PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n

PBSS5240Z_15

40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240ZF

Package：TO-261-4，TO-261AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 2A SOT223

Nexperia USA Inc.

PBSS5240ZX

Package：TO-261-4，TO-261AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 2A SOT223

Nexperia USA Inc.