丝印：S5240Z；Package：SC-73；40 V, 2 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240Z Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capabilit

文件：717.69 Kbytes 页数：14 Pages

NEXPERIA

安世

40 V, 2 A PNP low VCEsat (BISS) transistor

文件：233.9 Kbytes 页数：14 Pages

PHI

飞利浦

40 V, 2 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4240Z • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

40 V; 2 A PNP low VCEsat transistor

PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 2A SOT223

Nexperia USA Inc.

Package：TO-261-4，TO-261AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 2A SOT223

Nexperia USA Inc.