PBSS5240V

40 V low VCEsat PNP transistor

DESCRIPTION PNPtransistorprovidinglowVCEsatandhighcurrentcapabilityinaSOT666plasticpackage. NPNcomplement:PBSS4240V. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcurrentgain(hFE)athighIC •High

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PBSS5240V

40 V low VCEsat PNP transistor

DESCRIPTION PNPtransistorprovidinglowVCEsatandhighcurrentcapabilityinaSOT666plasticpackage. NPNcomplement:PBSS4240V. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcurrentgain(hFE)athighIC •High

PHI

PBSS5240V

丝印：52；Package：SOT666；40 V low VCEsat PNP transistor

1.Generaldescription PNPtransistorprovidinglowVCEsatandhighcurrentcapabilityinaSOT666ultrasmallSurface- MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS4240V 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapabi

PBSS5240V

40 V low VCEsat PNP transistor; • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE ) at high IC\n• High efficiency leading to reduced heat generation\n• Reduced printed-circuit board area requirements.\n• AEC-Q101 qualified\n;

PNP transistor providing low VCEsat and high current capability in a SOT666 plastic package. NPN complement: PBSS4240V.\n

PBSS5240V_15

PNP Transistors

PBSS5240V_15

40 V low VCEsat PNP transistor

PHI

PBSS5240V,115

Package：SOT-563，SOT-666；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 1.8A SOT666

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