PBSS5230PAP

丝印：2H；Package：DFN2020-6；30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

1.Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4230PANP.NPN/NPNcomplement:PBSS4230PAN. 2.Featuresandbenefits •Verylowcollec

PBSS5230PAP

30 V, 2 A PNP/PNP low VCEsat (BISS) transistor; • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n;

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.\n NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN.\n

PBSS5230PAP

30 V, 2 A PNP/PNP low VCEsat (BISS) transistor

ETC

PBSS5230PAP

30 V, 2 A PNP/PNP low VCEsat (BISS) transistor;

ETC

PBSS5230PAP-Q

30 V, 2 A PNP/PNP low VCEsat double transistor

Featuresandbenefits •Verylowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •HighcollectorcurrentgainhFEathighIC •ReducedPrinted-CircuitBoard(PCB)requirements •Highenergyefficiencyduetolessheatgeneration •Qualifiedaccordi

PBSS5230PAP-Q

30 V, 2 A PNP/PNP low VCEsat double transistor;