60 V, 1 A PNP low VCEsat transistor

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4160T-Q\n • Low collector-emitter saturation voltage VCEsat\n• High efficiency due to less heat generation\n• Cost-effective replacement for medium power transistors BCP52 and BCX52\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

Nexperia

安世

60 V, 1 A PNP low VCEsat (BISS) transistor

1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4160U. 1.2 Features n Low collector-emitter saturation voltage VCEsat n High collector current capability I

文件：247.33 Kbytes 页数：15 Pages

NEXPERIA

安世

20 (7/28) AWG Tinned Copper

文件：412.17 Kbytes 页数：4 Pages

ALPHAWIRE

ELECTRIC FUEL PUMP

文件：173.81 Kbytes 页数：4 Pages

MALLORY

RECTIFIERS

DESCRIPTION These series of high current rectifiers offers opportunity for size and weight reduction in high power supplies. FEATURES • Rating: 12A • Controlled Avalanche • Miniature Package • Surge Rating: 200A

文件：140.36 Kbytes 页数：3 Pages

Microsemi

美高森美