60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN/NPN complement: PBSS4260PANS\n PNP/PNP complement: PBSS5260PAPS • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain hFE at high IC\n• Reduced Printed-Circuit Board (PCB) requirements\n• Exposed heat sink for excellent thermal and electrical conductivity\n• High energy efficiency du;

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丝印：3D；Package：DFN2020D-6；60 V, 2 A NPN/PNP low VCEsat (BISS) double transistor

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安世安世半导体(中国)有限公司

60 V, 2 A NPN/PNP low VCEsat double transistor

NPN/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.\n NPN/NPN complement: PBSS4260PANS-Q\n PNP/PNP complement: PBSS5260PAPS-Q

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60 V, 2 A NPN/NPN low VCEsat (BISS) double transistor

文件：741.3 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 2 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5260QA. 2. Features and benefits • Very low collector-

文件：731.42 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司