9.6mm Discrete HFET

9.6mm Discrete HFET ● 9600 m x 0.5 m ● Nominal Pout of 37 -dBm at 6.0 GHz ● Nominal Gain of 9.5 -dB at 6.0 GHz ● Nominal PAE of 52 at 6.0 GHz ● Suitable for high reliability applications ● 0,572 x 2,324 x 0,102 mm (0.023 x 0.092 x 0.004 in.)

文件：90.3 Kbytes 页数：1 Pages

TRIQUINT

9.6mm Discrete HFET

Qorvo

威讯联合

9.6mm Discrete HFET

9.6mm Discrete HFET ● 9600 m x 0.5 m ● Nominal Pout of 37 -dBm at 6.0 GHz ● Nominal Gain of 9.5 -dB at 6.0 GHz ● Nominal PAE of 52 at 6.0 GHz ● Suitable for high reliability applications ● 0,572 x 2,324 x 0,102 mm (0.023 x 0.092 x 0.004 in.)

文件：90.3 Kbytes 页数：1 Pages

TRIQUINT

9.6 mm Discrete HFET

Description The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Key Features and Performance • 9600 µm x 0.5 µm HFET • Nominal Pout of 37d

文件：426.89 Kbytes 页数：9 Pages

TRIQUINT

9.6 mm Discrete HFET

文件：432.84 Kbytes 页数：9 Pages

TRIQUINT

9.6 mm Discrete HFET

文件：432.84 Kbytes 页数：9 Pages

TRIQUINT

9.6 mm Discrete HFET

Qorvo

威讯联合