40 V; 2 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5240T. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistor

文件：270.34 Kbytes 页数：7 Pages

恩XP

丝印：ZE；Package：SOT23；40 V; 2 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240T 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced h

文件：185.76 Kbytes 页数：8 Pages

NEXPERIA

安世

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：ZE；Package：SOT23；40 V; 2 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5240T-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced

文件：185.33 Kbytes 页数：8 Pages

NEXPERIA

安世

40 V; 2 A NPN low VCEsat (BISS) transistor

文件：270.34 Kbytes 页数：7 Pages

PHI

飞利浦

40 V; 2 A NPN low VCEsat (BISS) transistor

DESCRIPTION\nNPN low VCEsat transistor in a SOT23 plastic package.\nPNP complement: PBSS5240T.FEATURES\n• Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replacement for SOT89/SOT223 standard packaged transistors.AP • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replacement for SOT89/SOT223 standard packaged transistors.;

恩XP

40 V; 2 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5240T. • Low collector-emitter saturation voltage\n• High current capability\n• Improved device reliability due to reduced heat generation\n• Replacement for SOT89/SOT223 standard packaged transistors.\n• AEC-Q101 qualified;

Nexperia

安世

小信号三极管

YJ

益嘉源

Package：TO-236-3，SC-59，SOT-23-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 2A TO236AB

Nexperia USA Inc.

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 2A TO236AB

Nexperia USA Inc.