NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.8V(max)@Ic/Ib= 2A / 200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in comply with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件：556.87 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：4232DD；Package：TO-252AA；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.8V(max)@Ic/Ib= 2A / 200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in comply with EU RoHS 2.0  Green molding compound as per IEC61249 Standard

文件：556.87 Kbytes 页数：6 Pages

PANJIT

強茂

低电压双极晶体管

Panjit

強茂

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 32V 2A TO252

Panjit International Inc.