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PBSS4232DD_L2_00001

Marking:4232DD;Package:TO-252AA;NPN Low Vce(sat) Transistor

Features SiliconNPNepitaxialtype LowVce(sat)0.8V(max)@Ic/Ib=2A/200mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincomplywithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard

PANJITPan Jit International Inc.

強茂強茂股份有限公司

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