60 V, 2.7 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NT. Features and benefits ■ Very low collector-emitter saturation voltage VCEsat ■ High collector current capabil

文件：191.3 Kbytes 页数：15 Pages

恩XP

丝印：BL；Package：SOT23；60 V, 2.7 A PNP low VCEsat (BISS) transistor

Features and benefits * Very low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Printed-Circuit Board (PCB)

文件：304.66 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：BL；Package：SOT23；60 V, 2.7 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NT-Q 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector curre

文件：340.3 Kbytes 页数：15 Pages

NEXPERIA

安世

60 V, 2.7 A PNP low VCEsat (BISS) transistor

文件：191.3 Kbytes 页数：15 Pages

PHI

PHI

60 V, 2.7 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4041NT. • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PCB) area than for conventiona;

Nexperia

安世

60 V, 2.7 A PNP low VCEsat transistor

PNP low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS4041NT • Very low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Quali;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 2.7A TO236AB

Nexperia USA Inc.