30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor

General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Features and benefits ■ Low collector-emitter saturation voltage VCEsat ■ Optimized switching time ■ High collector current capab

文件：397.91 Kbytes 页数：15 Pages

恩XP

丝印：4032SN；Package：SO8；30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area t

文件：1.03696 Mbytes 页数：15 Pages

NEXPERIA

安世

30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor

文件：397.91 Kbytes 页数：15 Pages

PHI

PHI

PBSS4032SN - 30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor

30 V, 5.7 A NPN/NPN low V_CEsat (BISS) transistor - NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. ·Low collector-emitter saturation voltage VCEsat\n·Optimized switching time\n·High collector current capability IC and ICM\n·High collector current gain (hFE) at high IC\n·High efficiency due to less heat generation\n·Smaller required Printed-Circuit Board (PCB) area than for conventional transistor;

Nexperia

安世