30 V, 4.2 A PNP low VCEsat transistor

访客结账MyNexperia用户结账

Nexperia

安世

30 V, 4.4 A PNP low VCEsat (BISS) transistor

文件：199.4 Kbytes 页数：15 Pages

PHI

飞利浦

30 V, 4.4 A PNP low VCEsat (BISS) transistor

Features and benefits * Low collector-emitter saturation voltage VCEsat * Optimized switching time * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High energy efficiency due to less heat generation * AEC-Q101 qualified * Smaller required Print

文件：733.02 Kbytes 页数：15 Pages

NEXPERIA

安世

30 V, 4.4 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • Optimized switching time • High collector current capab

文件：303.85 Kbytes 页数：14 Pages

NEXPERIA

安世