PBSS4032NZ

丝印：PB4032NZ；Package：SC-73；30 V, 4.9 A NPN low VCEsat (BISS) transistor

Featuresandbenefits *Lowcollector-emittersaturationvoltageVCEsat *Optimizedswitchingtime *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highenergyefficiencyduetolessheatgeneration *AEC-Q101qualified *SmallerrequiredPrint

PBSS4032NZ

30 V, 4.9 A NPN low VCEsat (BISS) transistor; • Low collector-emitter saturation voltage VCEsat\n• Optimized switching time\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n;

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS4032PZ.\n

PBSS4032NZ

30 V, 4.9 A NPN low VCEsat (BISS) transistor

ETC

PBSS4032NZ

30 V, 4.9 A NPN low VCEsat (BISS) transistor;

恩XP

PBSS4032NZ-Q

丝印：PB4032NZ；Package：SOT223；30 V, 4.9 A NPN low VCEsat transistor

1.Generaldescription NPNlowVCEsattransistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD) plasticpackage. PNPcomplement:PBSS4032PZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Optimizedswitchingtime •Highcollectorcurrentcapabi

PBSS4032NZ-Q

30 V, 4.9 A NPN low VCEsat transistor;

PBSS4032NZ,115

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 4.9A SOT223

ETC