60 V, 3 A PNP low VCEsat transistor

PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBSS303ND • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified accordi;

Nexperia

安世

30 V, 5.1 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：310.7 Kbytes 页数：16 Pages

NEXPERIA

安世

SCREW TYPE SERIES

文件：310.12 Kbytes 页数：1 Pages

DBLECTRO

Miniature 3 mm surface mount chip-type cermet trimmer potentiometer

文件：163.09 Kbytes 页数：2 Pages

CTS

西迪斯

Clamp Meter

文件：1.10789 Mbytes 页数：24 Pages

FLUKE

福禄克