丝印：AE；Package：SC-74；60 V, 3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：279.48 Kbytes 页数：17 Pages

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丝印：AE；Package：TSOP6；60 V, 3 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PD-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：320.65 Kbytes 页数：14 Pages

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丝印：5D；Package：SC-62；30 V, 5.1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：310.73 Kbytes 页数：16 Pages

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30 V, 5.1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PX. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capabili

文件：132.84 Kbytes 页数：15 Pages

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丝印：S303NZ；Package：SC-73；30 V, 5.5 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：286.04 Kbytes 页数：15 Pages

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丝印：S303NZ；Package：SC-73；30 V, 5.5 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：273.49 Kbytes 页数：14 Pages

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Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI

30 V, 5.5 A NPN low VCEsat (BISS) transistor

文件：172.57 Kbytes 页数：14 Pages

恩XP

30 V, 5.1 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS303PX. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifie;

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30 V, 5.1 A NPN low VCEsat transistor

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