30 V, 5.1 A NPN low VCEsat transistor

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Nexperia

安世

30 V, 5.5 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：286.04 Kbytes 页数：15 Pages

NEXPERIA

安世

30 V, 5.5 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

文件：273.49 Kbytes 页数：14 Pages

NEXPERIA

安世

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Miniature 3 mm surface mount chip-type cermet trimmer potentiometer

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