PBLS4002Y

Marking：S2；Package：TSSOP6；40 V, 500 mA PNP loadswitch transistor

1.Generaldescription PNPlowVCEsattransistorandNPNResistor-EquippedTransistor(RET)inoneverysmallSOT363 (SC-88)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •LowVCEsattransistorandresistor-equippedtransistorinonepackage •Lowthresholdvoltage

PBLS4002Y

40 V PNP BISS loadswitch; • Low VCEsat (BISS) and resistor-equipped transistor in one package\n• Low threshold voltage (<1 V) compared to MOSFET\n• Low drive power required\n• Space-saving solution\n• Reduction of component count\n• AEC-Q101 qualified\n;

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in one package.\n

PBLS4002Y

40 V PNP BISS loadswitch

PBLS4002Y

Low VCEsat (BISS) transistors

PBLS4002Y-Q

Marking：S2；Package：TSSOP6；40 V PNP loadswitch transistor

1.Generaldescription PNPlowVCEsattransistorandNPNResistor-EquippedTransistor(RET)inoneverysmallSOT363 (SC-88)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •LowVCEsattransistorandresistor-equippedtransistorinonepackage •Lowthresholdvoltage

PBLS4002Y-Q

40 V PNP loadswitch transistor; • Low VCEsat transistor and resistor-equipped transistor in one package\n• Low threshold voltage (<1 V) compared to MOSFET\n• Low drive power required\n• Space-saving solution\n• Reduction of component count\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in one very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n