丝印：S2；Package：TSSOP6；40 V, 500 mA PNP loadswitch transistor

1. General description PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in one very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low VCEsat transistor and resistor-equipped transistor in one package • Low threshold voltage

文件：1.32545 Mbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V PNP BISS loadswitch

文件：86.46 Kbytes 页数：14 Pages

PHI

飞利浦

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

飞利浦

40 V PNP BISS loadswitch

文件：114.45 Kbytes 页数：11 Pages

恩XP

丝印：S2；Package：TSSOP6；40 V PNP loadswitch transistor

1. General description PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in one very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low VCEsat transistor and resistor-equipped transistor in one package • Low threshold voltage

文件：276.55 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V PNP BISS loadswitch

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in one package. • Low VCEsat (BISS) and resistor-equipped transistor in one package\n• Low threshold voltage (<1 V) compared to MOSFET\n• Low drive power required\n• Space-saving solution\n• Reduction of component count\n• AEC-Q101 qualified;

Nexperia

安世

40 V PNP loadswitch transistor

PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in one very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. • Low VCEsat transistor and resistor-equipped transistor in one package\n• Low threshold voltage (<1 V) compared to MOSFET\n• Low drive power required\n• Space-saving solution\n• Reduction of component count\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世