500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified;

Nexperia

安世

丝印：4H；Package：SOT89；400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor

文件：234.12 Kbytes 页数：13 Pages

NEXPERIA

安世

400 V, 0.5 A PNP high-voltage low VCEsat transistor

PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.\n NPN complement: PBHV8540X-Q • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PBHV9540X/SOT89/MPT3

Nexperia USA Inc.

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 400V 0.5A SOT89

Nexperia USA Inc.