500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T. Features ■ High voltage ■ Low collector-emitter saturation voltage VCEsat ■ High coll

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丝印：W5；Package：SOT23；500 V, 0.25 A PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability I

文件：285.35 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

文件：125.1 Kbytes 页数：12 Pages

恩XP

丝印：W5；Package：SOT23；500 V, 0.25 A PNP high-voltage low VCEsat transistor

1. General description PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T-Q. 2. Features and benefits • High voltage • Low collector-emitter saturation voltage VCEsat • High collector current capability

文件：268.58 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

文件：125.1 Kbytes 页数：12 Pages

恩XP

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

General description\nPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T. ■ High voltage\n■ Low collector-emitter saturation voltage VCEsat\n■ High collector current capability IC and ICM\n■ High collector current gain (hFE) at high IC\n■ AEC-Q101 qualifiedApplications\n■ Electronic ballast for fluorescent lighting\n■ LED driver for LED chain module\n■ LCD backlighting\n■;

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恩智浦

500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high collector current\n• AEC-Q101 qualified\n• Small SMD plastic package;

Nexperia

安世

500 V, 0.25 A PNP high-voltage low VCEsat transistor

PNP high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8540T-Q. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Small SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 400V 0.25A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 400V 0.25A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司