丝印：V8140Z；Package：SC-73；500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

Features * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM *High collector current gain (hFE) at high IC * AEC-Q101 qualified * Medium power SMD plastic package

文件：274.3 Kbytes 页数：13 Pages

NEXPERIA

安世

500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

文件：160.78 Kbytes 页数：12 Pages

恩XP

500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9540Z. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified\n• Medium power SMD plastic package;

Nexperia

安世

Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 400V 1A SOT223

Nexperia USA Inc.