丝印：HV316Z；Package：SC-73；600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor

文件：701.36 Kbytes 页数：14 Pages

NEXPERIA

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600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor

文件：701.36 Kbytes 页数：14 Pages

NEXPERIA

安世

600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor

PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC\n• High collector current gain hFE at high IC\n• AEC-Q101 qualified;

Nexperia

安世

600 V, 0.1 A PNP high-voltage low VCEsat transistor

PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC\n• High collector current gain hFE at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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Package：TO-261-4，TO-261AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 600V 0.1A SOT223

Nexperia USA Inc.