600 V, 0.1 A PNP high-voltage low VCEsat transistor

PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC\n• High collector current gain hFE at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

600 V, 0.1 A PNP high-voltage low VCEsat (BISS) transistor

文件：701.36 Kbytes 页数：14 Pages

NEXPERIA

安世

CABLE ASSEMBLY PE-P195 SMA MALE TO SMA FEMALE

文件：106.22 Kbytes 页数：1 Pages

PASTERNACK

Pasternack Enterprises

文件：117.36 Kbytes 页数：1 Pages

PASTERNACK