600 V, 0.1 A NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBHV3160Z-Q • Low collector-emitter saturation voltage VCEsat\n• High collector current capability\n• High collector current gain hFE at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Duct sensors for relative humidity and temperature

文件：362.51 Kbytes 页数：10 Pages

SIEMENS

西门子

1600 um Discrete GaAs pHEMT

Product Overview The Qorvo QPD2160D is a discrete 1600 micron pHEMT which operates from DC to 20 GHz. The QPD2160D is fabricated using Qorvo’s proven standard 0.25 um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high

文件：1.07021 Mbytes 页数：10 Pages

QORVO

威讯联合

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

文件：129.34 Kbytes 页数：2 Pages

Microsemi

美高森美