1600 um Discrete GaAs pHEMT

Product Overview The Qorvo QPD2160D is a discrete 1600 micron pHEMT which operates from DC to 20 GHz. The QPD2160D is fabricated using Qorvo’s proven standard 0.25 um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high

文件：1.07021 Mbytes 页数：10 Pages

QORVO

威讯联合

DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die

Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating condition • Frequency Range: DC - 20 GHz\n• Typical Output Power P1dB: 32.5 dBm\n• Typical Gain at 12 GHz: 10.4 dB\n• Typical PAE at 12 GHz: 63%\n• Typical NF at 12 GHz: 1 dB\n• No Vias\n• Technology: 0.25 um GaAs pHEMT\n• Chip Dimensions: 0.41 x 0.54 x 0.10 mm;

Qorvo

威讯联合

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

文件：129.34 Kbytes 页数：2 Pages

Microsemi

美高森美

Voltage Controlled Oscillator

文件：182.36 Kbytes 页数：2 Pages

MINI

Voltage Controlled Oscillator

文件：182.36 Kbytes 页数：2 Pages

MINI