40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. 3. Applications • Supply l

文件：238.78 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：PB5540；Package：SC-73；40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. 3. Applications • Supply l

文件：238.78 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：PB5540；Package：SC-73；40 V low VCEsat PNP transistor

1. General description PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z-Q 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Qualified according to AEC

文件：222.84 Kbytes 页数：10 Pages

NEXPERIA

安世

40 V, 5 A PNP low VCEsat (BISS) transistor

DESCRIPTION PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency leading to less heat generation. APPLICATIONS • Supply line

文件：100.93 Kbytes 页数：13 Pages

PHI

PHI

Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI