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20V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@4.5V,IDS@500mA=0.4Ω  RDS(ON), VGS@2.5V,IDS@300mA=0.7Ω  RDS(ON), VGS@1.8V,IDS@100mA=1.2Ω(typ)  Advanced Trench Process Technology  Specially Designed for Load Switch or PWM application.  ESD Protected  Lead free in compliance with EU RoHS 2.0  Green molding co

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PANJIT

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