共模滤波器

PULSE

普思

4 STS-192/STM-64, 16 STS-48/STM-16, MUX/DEMUX

文件：183.94 Kbytes 页数：3 Pages

EXAR

艾科嘉

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) • Low gate charge QG = 10 nC TYP. (VGS

文件：180.28 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μ PA2757GR is Dual N-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) • Low gate charge QG = 10 nC TYP. (VGS = 10 V)

文件：371.36 Kbytes 页数：10 Pages

RENESAS

瑞萨