D3V3S1U2LP1610Q-7

Marking：PA2；Package：U-DFN1610-2；ONE CHANNEL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDIODES™D3V3S1U2LP1610Q

DMG1023UVQ-13

Marking：PA2；Package：SOT563；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits DualP-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMG1023UVQissuitablefora

DMG1023UVQ-7

Marking：PA2；Package：SOT563；DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

FeaturesandBenefits DualP-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMG1023UVQissuitablefora

LM4040B30IDCKR

Marking：PAU；Package：SC70；LM4040 Precision Micropower Shunt Voltage Reference

1Features •Fixedoutputvoltagesof2.048V,2.5V,3V,4.096V, 5V,8.192V,and10V •Tightoutputtolerancesandlowtemperature coefficient –Maximum0.1%,100ppm/°C–AGrade –Maximum0.2%,100ppm/°C–BGrade –Maximum0.5%,100ppm/°C–CGrade –Maximum1.0%,150ppm/°

LM4040B30IDCKRG4

Marking：PAU；Package：SC70；LM4040 Precision Micropower Shunt Voltage Reference

1Features •Fixedoutputvoltagesof2.048V,2.5V,3V,4.096V, 5V,8.192V,and10V •Tightoutputtolerancesandlowtemperature coefficient –Maximum0.1%,100ppm/°C–AGrade –Maximum0.2%,100ppm/°C–BGrade –Maximum0.5%,100ppm/°C–CGrade –Maximum1.0%,150ppm/°

PAN1770

Marking：PAN1770；Low Energy Module

Features •Surfacemounttypedimensions: 15.6mm×8.7mm×2.05mm •SameformfactorasPAN1026AandPAN1762 butsmallerpitchandmorepins •U.FLconnectorforexternalantenna •NordicnRF52840featuringARM®Cortex®-M4F with64MHz •Bluetooth5.1LEincludingLE2MandLECoded PH

TCS30DPU

Marking：PA7；Package：UFV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •Digital-OutputMagneticSensor Features (1)Outputconfiguration:Push-pull (2)Poledetected:Southornorthpole

TCS30NPU

Marking：PA6；Package：UFV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •Digital-OutputMagneticSensor Features (1)Outputconfiguration:Push-pull (2)Poledetected:Northpole

TCS30SPU

Marking：PA5；Package：UFV；CMOS Digital Integrated Circuits Silicon Monolithic

FunctionalDescription •Digital-OutputMagneticSensor Features (1)Outputconfiguration:Push-pull (2)Poledetected:Southpole

TCS40DPR

Marking：PA8；Package：SOT-23F；TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

DigitalOutputMagneticSensor Feature Push-PullOutput South-PoleandNorth-PoleDetection