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BD5240G-TR

Marking:PA;Package:SSOP5;Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

罗姆罗姆半导体集团

BD5240G-TR

Marking:PA;Package:SSOP5;Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

罗姆罗姆半导体集团

BD5240G-TR

Marking:PA;Package:SSOP5;Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

罗姆罗姆半导体集团

BD5240G-TR

Marking:PA;Package:SSOP5;Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

罗姆罗姆半导体集团

BD5240G-TR

Marking:PA;Package:SSOP5;Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

罗姆罗姆半导体集团

BD5240G-TR

Marking:PA;Package:SSOP5;Free Delay Time Setting CMOS Voltage Detector IC Series

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

罗姆罗姆半导体集团

BD5240G-TR

Marking:PA;Package:SSOP5;Delay Time Controlled by external Capacitor, Two output types

Description ROHM’sBD52□□G/FVEandBD53□□G/FVEseriesarehighlyaccurate,lowcurrentconsumptionresetICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtowoutputtypes(NchopendrainandCMOSoutput)anddetectionvoltagesrangefrom2.3Vto6.0Vinincrementsof0.1V,

ROHMRohm

罗姆罗姆半导体集团

DESD0V8Z1BCSF-7

Marking:PA;Package:X2-DSN0603-2;LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Contact±6kV 1ChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Applications USB3.1 Thunderbolt3

DIODESDiodes Incorporated

美台半导体

ESD3.3V88D-2A

Marking:PA;Package:DFN1006P3;Transient Voltage Suppressors for ESD Protection

Features 24~38WattsPeakPulsePowerperLine(tp=8/20μs) ProtectstwoI/Oline(Unidirectional) Lowclampingvoltage Workingvoltages:3.3V,5Vand12V Lowleakagecurrent IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) Applications CellularHandsets&

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

IQD009N06NM5CGSC

Marking:PA;Package:PG-WHTFN-9;MOSFET OptiMOS™ 5 Power‑Transistor, 60 V

Features •N‑channel,normallevel •Verylowon‑resistanceRDS(on) •Superiorthermalresistance •Optimizeddesignfordoublesidecooling •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    PA

  • 功能描述:

    天线 2.4 GHz Ceramic PIFA Antenna-Top L Mount

  • RoHS:

  • 制造商:

    Molex

  • 技术类型:

    Cellular Antenna

  • 尺寸:

    106.7 mm L x 13 mm W

供应商型号品牌批号封装库存备注价格
ST
23+
DIP-8L
8000
只做原装现货
询价
ST
23+
DIP-8L
7000
询价
美微科/MCC
24+
con
3000
优势库存,原装正品
询价
NK/南科功率
2025+
SOP8
986966
国产
询价
更多PA供应商 更新时间2025-6-26 15:01:00