P8

型号：BZX84C5V6；Package：SOT-23；Silicon Planar Zener Diodes

■SiliconPlanarZenerDiodes ThisseriesofZenerdiodesisofferedintheconvenient,surfacemountplasticSOT-23package.Thesedevicesaredesignedtoprovidevoltageregulationwithminimumspacerequirement.Theyarewellsuitedforapplicationssuchascellularphones,handheldportables

P8

型号：BZX84W-C7V5；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 3.Applications •Gene

P8

型号：BZX84W-C7V5-Q；Package：SC-70；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 •Qualifiedaccordingto

P8

型号：ESD601DPYR；Package：X1SON；ESD601 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1Features •IEC61000-4-2ESDProtection: –±15kVcontactdischarge –±15kVairgapdischarge •ISO10605(330pF,330Ω)ESDProtection: –±12kVcontactdischarge –±12kVair-gapdischarge •IEC61000-4-5surgeprotection: –2.7A(8/20μs) •I/Ocapacitance:0.3pF(typical) •Ultralowle

P8

型号：ISL9016IRUMCZ-T；Package：6LdμTDFN；150mA Dual LDO with Low Noise, High PSRR, and Low IQ

150mADualLDOwithLowNoise,HighPSRR,andLowIQ ISL9016isahighperformancedualLDOcapableofprovidingupto150mAcurrentoneachchannel.ItfeaturesalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto4.7µFwithanESRofupto200mΩ. Features •

P8

型号：MM5Z11；Package：SOD-541；Zener Diode

Features ●Highreliability ●ZenerVoltage2.0V~75V

P8

型号：MT4S102T；Package：TESQ；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

P8

型号：MT4S102U；Package：USQ；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

P8

型号：NZ8P36VMX2WT5G；Zener Protection Diode

Features •FullRangeofWorkingVoltageOptions •HighESDRatings •WettableFlankPackageforOptimalAutomatedOpticalInspection (AOI) •SZPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseD

P8

型号：PMEG2005CT；Package：SOT23；500 mA low VF dual MEGA Schottky barrier rectifier

Featuresandbenefits *Averageforwardcurrent:IF(AV)≤0.5A *Reversevoltage:VR≤20V *Lowforwardvoltage *AEC-Q101qualified *SmallSMDplasticpackage