RB751V-40

Marking：P60；Package：SOD-323F；SURFACE MOUNT SCHOTTKY DIODES

FEATURES •Extremelyfastswitchingspeed •VeryLowVF:0.325V(Typ)atIF=1mA •Surfacemountpackageideallysuitedforautmaticinsertion •LeadfreeincompliancewithEURoHS2011/65/EUdirective •GreenmoldingcompoundasperIEC61249Std..(HalogenFree)

SI2377EDS

Marking：P6***；Package：SOT-23；P-Channel 20 V (D-S) MOSFET

FEATURES •TrenchFET®powerMOSFET •100Rgtested •TypicalESDperformance2000V •BuiltinESDprotectionwithZenerDiode •Materialcategorization:fordefinitionsof   compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Loadswitchforportabledevices

STP60NF06FP

Marking：P60NF06；Package：TO-220FP；N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II™ Power MOSFET

Description ThisPowerMOSFETseriesrealizedwith STMicroelectronicsuniqueSTripFETprocesshas specificallybeendesignedtominimizeinput capacitanceandgatecharge.Itistherefore suitableasprimaryswitchinadvancedhighefficiencyisolatedDC-DCconvertersforTelecom andComputer

STP65NF06

Marking：P65NF06；Package：TO-220；N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”™ strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea

STP6NK50Z

Marking：P6NK50Z；Package：TO-220；N-CHANNEL 500V - 0.93 ohm - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH MOSFET

■TYPICALRDS(on)=0.93Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100AVALANCHETESTED ■GATECHARGEMINIMIZED ■VERYLOWINTRINSICCAPACITANCES ■VERYGOODMANUFACTURING REPEATIBILITY DESCRIPTION TheSuperMESH™seriesisobtainedthroughan extremeoptimizationofST’swellestablishedst

STP6NK60Z

Marking：P6NK60Z；Package：TO-220；N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

TheSuperMESHseriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESHlayout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

STP6NK60ZFP

Marking：P6NK60ZFP；Package：TO-220FP；N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/D2PAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

TheSuperMESHseriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESHlayout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

STP6NK90Z

Marking：P6NK90Z；Package：TO-220；N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETsdevelopedusingtheSuperMESH™technologybySTMicroelectronics,anoptimizationofthewell-establishedPowerMESH™.Inadditiontoasignificantreductioninon-resistance,thesedevicesaredesignedtoensureah

STP6NK90ZFP

Marking：P6NK90ZFP；Package：TO-220FP；N-channel 900V - 1.56 - 5.8A Zener-protected SuperMESH Power MOSFET

Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETsdevelopedusingtheSuperMESH™technologybySTMicroelectronics,anoptimizationofthewell-establishedPowerMESH™.Inadditiontoasignificantreductioninon-resistance,thesedevicesaredesignedtoensureah

TLP627M

Marking：P627M；Package：11-5B2S；Photocouplers Infrared LED & Photo Darlington Transistor

Applications •ProgrammableLogicControllers(PLCs) •I/OInterfaceBoards •HomeElectricAppliances Features (1)Collector-emittervoltage:300V(min) (2)Currenttransferratio:1000(min)(@IF=1mA,VCE=1V) (3)Isolationvoltage:5000Vrms(min) (4)Operatingtemperature:-55