KI2377EDS-HF

Marking：P6；Package：SOT-23；P-Channel MOSFET

■Features ●VDS(V)=-20V ●ID=-4.4A ●RDS(ON)

MT4S100T

Marking：P6；Package：TESQ；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

MT4S100U

Marking：P6；Package：USQ；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SI2377EDS

Marking：P6；Package：SOT-23；P-Channel MOSFET

■Features ●VDS(V)=-20V ●ID=-4.4A ●RDS(ON)

SI2377EDS-HF

Marking：P6；Package：SOT-23；P-Channel MOSFET

■Features ●VDS(V)=-20V ●ID=-4.4A ●RDS(ON)

TPS7A1411PYBKR

Marking：P6；Package：DSBGA；TPS7A14 1-A, Low VIN, Low VOUT, Ultra-Low Dropout Regulator

1Features •Ultra-lowinputvoltagerange:0.7Vto2.2V •Highefficiency: –Dropoutvoltageat1A:70mV(max,YBK) –SpecifiedforVIN=VOUT+100mV •Excellentloadtransientresponse: –20mVforILOAD=3mAto600mAin20μs •Accuracyoverload,line,andtemperature:1 •High

74HC2G16GV

Marking：P6；Package：SC-74；Dual buffer gate

74HC2G16GW

Marking：P6；Package：SC-88；Dual buffer gate

FP6160S5GTR

Marking：P6；Package：SOT-23-5；150mA High Voltage Low Dropout Linear Regulator

DDTB113EC

Marking：P60；Package：SOT-23；PNP PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryNPNTypesAvailable(DDTD) •Built-InBiasingResistors,R1,R2 •LeadFree/RoHSCompliant(Note2)