丝印：P38；Package：SC-88A；TinyLogic ULP-A NAND Gate (Open-Drain Output)

The NC7SP38 is a single 2−input NAND gate with open−drain output in tiny footprint packages. The device is designed to operate for VCC = 0.9 V to 3.6 V. Features • Designed for 0.9 V to 3.6 V VCC Operation • 2.9 ns tPD at 3.3 V (Typ) • Inputs/Outputs Over−Voltage Tolerant up to 3.6 V • IO

文件：295.3 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：P38；Package：MAA05A；TinyLogic ULP 2-Input NAND Gate

文件：299.52 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

CdS photoconductive cell

CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their operating circ

文件：143.66 Kbytes 页数：2 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

丝印：38M；Package：SOD-123FL；Thyristor Surge Suppressors (TSS)

Features and Benefits Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Eliminates over voltage caused by fast rising transients Moisture sensitivity level: Level 1 Weight 69 mg (approximate) Non degenerative Response Time is

文件：2.90116 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P3800EA；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82579 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P3800EB；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82166 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P3800EC；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82987 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P38LA；Package：DO-15；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.73964 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P38LB；Package：DO-15；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.74266 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P38LC；Package：DO-15；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.74287 Mbytes 页数：6 Pages

UNSEMI

优恩半导体