丝印：P38；Package：SC-88A；TinyLogic ULP-A NAND Gate (Open-Drain Output)

The NC7SP38 is a single 2−input NAND gate with open−drain output in tiny footprint packages. The device is designed to operate for VCC = 0.9 V to 3.6 V. Features • Designed for 0.9 V to 3.6 V VCC Operation • 2.9 ns tPD at 3.3 V (Typ) • Inputs/Outputs Over−Voltage Tolerant up to 3.6 V • IO

文件：295.3 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

丝印：P38；Package：MAA05A；TinyLogic ULP 2-Input NAND Gate

文件：299.52 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：P3800EA；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82579 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P3800EB；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82166 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P3800EC；Package：TO-92；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：2.82987 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P38LA；Package：DO-15；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.73964 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P38LB；Package：DO-15；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.74266 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P38LC；Package：DO-15；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.74287 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P38A；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.38481 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P38B；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.39657 Mbytes 页数：6 Pages

UNSEMI

优恩半导体