丝印：P3007；Package：PDFN3333；P-Channel Enhancement Mode MOSFET

GENERAL FEATURES ® Vos =30V1o =-50 Rosco 8.0mQ @Ves=-10V typ Reson 18m0 @V cs=-4 5V typ

文件：2.05948 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：P3007L；Package：TO252；P-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters Features Low On-R

文件：448.14 Kbytes 页数：7 Pages

DIODES

美台半导体