DDTA144VE-7-F

Marking：P21；Package：SOT523；PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features -EpitaxialPlanarDieConstruction -ComplementaryNPNTypesAvailable(DDTC) -Built-InBiasingResistors,R1R2 -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFreeGreenDevice(Note3) -QualifiedtoAEC-Q101StandardsforHighReliability

DDTA144WE-7-F

Marking：P22；Package：SOT523；PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features -EpitaxialPlanarDieConstruction -ComplementaryNPNTypesAvailable(DDTC) -Built-InBiasingResistors,R1R2 -TotallyLead-Free&FullyRoHSCompliant(Notes1&2) -HalogenandAntimonyFreeGreenDevice(Note3) -QualifiedtoAEC-Q101StandardsforHighReliability

DMP2040USS-13

Marking：P2040US；Package：SO-8；P-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3)

ESD5432N

Marking：P2.X；Package：DFN1006-3；Bi-directional TVS Diode

Features +Ultrasmallpackage:1.0x0.6x0.5mm *Verylowcapacitance:15pFtypical «Ultralowleakage:nAlevel +Lowoperatingvoltage:+5V +Lowclampingvoltage +3-pinleadlesspackage «Upto2-lineprotects +Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest. Air

ESD5452N

Marking：P2.X；Package：DFN1006-3；Bi-directional TVS Diode

Features +Ultrasmallpackage:1.0x0.6x0.5mm *Verylowcapacitance:15pFtypical «Ultralowleakage:nAlevel +Lowoperatingvoltage:+5V +Lowclampingvoltage +3-pinleadlesspackage «Upto2-lineprotects +Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest. Air

ESD9NS5V

Marking：P2.X；Package：DFN1006-3；Bi-directional TVS Diode

Features +Ultrasmallpackage:1.0x0.6x0.5mm *Verylowcapacitance:15pFtypical «Ultralowleakage:nAlevel +Lowoperatingvoltage:+5V +Lowclampingvoltage +3-pinleadlesspackage «Upto2-lineprotects +Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest. Air

ESDBL5V0F2

Marking：P2.X；Package：DFN1006-3；Bi-directional TVS Diode

Features +Ultrasmallpackage:1.0x0.6x0.5mm *Verylowcapacitance:15pFtypical «Ultralowleakage:nAlevel +Lowoperatingvoltage:+5V +Lowclampingvoltage +3-pinleadlesspackage «Upto2-lineprotects +Complieswithfollowingstandards: —IEC61000-4-2(ESD)immunitytest. Air

FDFMA2P029Z

Marking：P29；Package：WDFN6；P-Channel MOSFET

Features MOSFET •MaxrDS(on)=95matVGS=–4.5V,ID=–3.1A •MaxrDS(on)=141matVGS=–2.5V,ID=–2.5A •HBMESDProtectionLevel>2.5kV(Note1) Schottky •VF

FDFMA2P029Z-F106

Marking：P29；Package：WDFN6；P-Channel MOSFET

Features MOSFET •MaxrDS(on)=95matVGS=–4.5V,ID=–3.1A •MaxrDS(on)=141matVGS=–2.5V,ID=–2.5A •HBMESDProtectionLevel>2.5kV(Note1) Schottky •VF

LM4040A25IDCKR

Marking：P2U；Package：SC70；LM4040 Precision Micropower Shunt Voltage Reference

1Features •Fixedoutputvoltagesof2.048V,2.5V,3V,4.096V, 5V,8.192V,and10V •Tightoutputtolerancesandlowtemperature coefficient –Maximum0.1%,100ppm/°C–AGrade –Maximum0.2%,100ppm/°C–BGrade –Maximum0.5%,100ppm/°C–CGrade –Maximum1.0%,150ppm/°