P2600SB

Marking：P26B；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

P2600SC

Marking：P26C；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

P2600SD

Marking：P26D；Package：DO-214AA；THYRISTOR SURGE SUPPRESSORS TSS

FEATURES: Excellentcapabilityofab Quickresponsetosurgev Eliminatesovervoltagecau Moisturesensitivityleve Nondegenerative machines,F absorbingtransientsurge urgevoltage(nsLevel) ecausedbyfastrisingtransients level:Level1

P2600TA

Marking：P26A；Package：DO-214AC；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Lowvoltageovershoot Lowon-statevoltage Doesnotdegradesurgecapabilityaftermultiplesurgeevents withinlimit Failsshortcircuitwhensurgedinexcessofratings LowCapacitance

P2600TB

Marking：P26B；Package：DO-214AC；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis

PAM2808BLBR

Marking：P2808；Package：SOP-8；5W HIGH POWER HBLED DRIVER

Description ThePAM2808isa5WhighpowerHBLEDdriverwith1.5Aconstantcurrent.Itfeatureshighefficiencyandlowquiescentcurrent,makingitidealforbatterypoweredapplications. ThePAM2808featuresovercurrentprotectionandovertemperatureshutdown.ThePAM2808isstablewithace

PJP2NA70_T0_00001

Marking：P2NA70；Package：TO-220AB；700V N-Channel MOSFET

Features RDS(ON),VGS@10V,ID@2A

PTAS2781RYYR

Marking：P278-SA；Package：VQFN-HR；TAS2781 23-V Class-D Amplifier with Real Time Integrated Speaker Protection and Audio Processing

1Features KeyFeatures •IntegratedDSPforAudioProcessing •23-VSupplyforClass-DOutputStage •Y-BridgeMulti-LevelSupplyArchitecture •Hybrid-ProExternalBoostControlAlgorithm •UltrasonicOutputSupportupto40kHz OutputPower: •25W,1THD+N(4Ω,18V) •30WMaximumO

PTPS6521901RHBR

Marking：P219XX；Package：VQFN；TPS65219 Integrated Power Management IC for ARM Cortex?볾53 Processors and FPGAs

1Features •3Buckconvertersatupto2.3-MHznon-fixed switchingfrequency: –1xVIN:2.5V–5.5V;IOUT:3.5A;VOUT0.6V– 3.4V –2xVIN:2.5V–5.5V;IOUT:2A;VOUT0.6V– 3.4V •4linearregulators: –2xVIN:1.5V–5.5V;IOUT:400mA;VOUT: 0.6V–3.4V(configurableas

PTPS6521901RSMR

Marking：P219XX；Package：VQFN；TPS65219 Integrated Power Management IC for ARM Cortex?볾53 Processors and FPGAs

1Features •3Buckconvertersatupto2.3-MHznon-fixed switchingfrequency: –1xVIN:2.5V–5.5V;IOUT:3.5A;VOUT0.6V– 3.4V –2xVIN:2.5V–5.5V;IOUT:2A;VOUT0.6V– 3.4V •4linearregulators: –2xVIN:1.5V–5.5V;IOUT:400mA;VOUT: 0.6V–3.4V(configurableas