SI2300DS

Marking：P2***；Package：SOT-23；N-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverterforPortableDevices •LoadSwitch

SPB160N04S2L-03

Marking：P2N04L03；Package：P-TO263-7-3；OptiMOS Power-Transistor

Feature •N-Channel •Enhancementmode •LogicLevel •HighCurrentRating •LowOn-ResistanceRDS(on) •175°Coperatingtemperature •Avalancherated •dv/dtrated

STP20NK50Z

Marking：P20NK50Z；Package：TO-220；N-CHANNEL 500V - 0.23ohm - 20A TO-220/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STP20NK50Z

Marking：P20NK50Z；Package：TO-220；N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247

DESCRIPTION TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseri

STP20NM60

Marking：P20NM60；Package：TO-220；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STP20NM60FP

Marking：P20NM60FP；Package：TO-220FP；N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

SVTP209R7NP7

Marking：P209R7NP7；Package：TO-247-3L；130A, 200V N-CHANNEL MOSFET

DESCRIPTION SVTP209R7NP7isanN-channelenhancementmodepowerMOS fieldeffecttransistorwhichisproducedusingSilan'sLVMOS technology.Theimprovedprocessandcellstructurehavebeen especiallytailoredtominimizeon-stateresistance,providesuperior switchingperformanceandhigh

TLC27L2ACPS

Marking：P27L2A；Package：SO；LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS

TrimmedOffsetVoltage: TLC27L7...500µVMaxat25°C, VDD=5V
InputOffsetVoltageDrift...Typically 0.1µV/Month,IncludingtheFirst30Days
WideRangeofSupplyVoltagesOver SpecifiedTemperatureRange: 0°Cto70°C...3Vto16V −40°Cto85°C...4Vto16V −55°C

TLC27L2ACPSG4

Marking：P27L2A；Package：SO；LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS

TrimmedOffsetVoltage: TLC27L7...500µVMaxat25°C, VDD=5V
InputOffsetVoltageDrift...Typically 0.1µV/Month,IncludingtheFirst30Days
WideRangeofSupplyVoltagesOver SpecifiedTemperatureRange: 0°Cto70°C...3Vto16V −40°Cto85°C...4Vto16V −55°C

TLC27L2CPS

Marking：P27L2；Package：SO；LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS

TrimmedOffsetVoltage: TLC27L7...500µVMaxat25°C, VDD=5V
InputOffsetVoltageDrift...Typically 0.1µV/Month,IncludingtheFirst30Days
WideRangeofSupplyVoltagesOver SpecifiedTemperatureRange: 0°Cto70°C...3Vto16V −40°Cto85°C...4Vto16V −55°C