丝印：P1F；Package：SOT-89；NPN SILICON TRANSISTOR SURFACE MOUNT

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. •

文件：136.36 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：P1F；Package：SOT-89；NPN Silicon Planar Epitaxial Transistor

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • PNP Complement is PZT2907AT1 • The SOT−223 Package Can be Soldered Using Wave or

文件：113.77 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

文件：353.65 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFETs 900V, 1A, N-channel

文件：1.77914 Mbytes 页数：7 Pages

SHINDENGEN