isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 14Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

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ISC

无锡固电

Power MOSFETs 900V, 1A, N-channel

文件：1.77914 Mbytes 页数：7 Pages

SHINDENGEN

MOSFET

Shindengen

新电元